Skip to Content
Find More Like This
Return to Search

All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

United States Patent

June 26, 2001
View the Complete Patent at the US Patent & Trademark Office
U.S. Department of Energy - Visit the Office of the Assistant General Counsel for Technology Transfer & Intellectual Property Website
An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.
McCandless; Brian E. (Elkton, MD)
The United States of America as represented by the United States Department of Energy (Washington, DC)
09/ 516,686
March 1, 2000
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to a Contract between the U.S. Department of Energy and the University of Delaware.