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Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

United States Patent

June 26, 2001
View the Complete Patent at the US Patent & Trademark Office
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Hot-Wire Chemical Vapor Deposition (HWCVD) technologies
The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
Iwancizko; Eugene (Lafayette, CO), Jones; Kim M. (Arvada, CO), Crandall; Richard S. (Boulder, CO), Nelson; Brent P. (Golden, CO), Mahan; Archie Harvin (Golden, CO)
Midwest Research Institute (Kansas City, MO)
09/ 316,342
May 21, 1999
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-98GO10337 between the United States Department of Energy and the Midwest Research Institute.