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Method for mask repair using defect compensation

United States Patent

May 22, 2001
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.
Sweeney; Donald W. (San Ramon, CA), Ray-Chaudhuri; Avijit K. (Livermore, CA)
EUV LLC (Santa Clara, CA)
09/ 208,622
December 8, 1998
STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under contract No. DE - AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.