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Process for forming epitaxial perovskite thin film layers using halide precursors

United States Patent

May 15, 2001
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.
Clem; Paul G. (Albuquerque, NM), Rodriguez; Mark A. (Albuquerque, NM), Voigt; James A. (Corrales, NM), Ashley; Carol S. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
09/ 356,810
July 20, 1999
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH This invention was made with Government support under Contract DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in this invention.