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Extreme-UV lithography system

United States Patent

May 1, 2001
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.
Replogle; William C. (Livermore, CA), Sweatt; William C. (Albuquerque, NM)
EUV LLC (Livermore, CA)
09/ 305,172
May 4, 1999
This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights to the invention.