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Method of forming a dielectric thin film having low loss composition of Ba.sub.x Sr.sub.y Ca.sub.1-x-y TiO.sub.3 : Ba.sub.0.12-0.25 Sr.sub.0.35-0.47 Ca.sub.0.32-0.53 TiO.sub.3

United States Patent

November 14, 2000
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A dielectric thin-film material for microwave applications, including use as a capacitor, the thin-film comprising a composition of barium strontium calcium and titanium of perovskite type (Ba.sub.x Sr.sub.y Ca.sub.1-x-y)TiO.sub.3. Also provided is a method for making a dielectric thin film of that formula over a wide compositional range through a single deposition process.
Xiang; Xiao-Dong (Alameda, CA), Chang; Hauyee (Berkeley, CA), Takeuchi; Ichiro (Albany, CA)
The United States of America as represented by the United States Department of Energy (Washington, DC)
09/ 420,873
October 19, 1999
GOVERNMENT RIGHTS The United States Government has a paid-up license in this invention pursuant to Contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California for management of the Lawrence Berkeley National Laboratory.