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Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

United States Patent

November 7, 2000
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.
McKee; Rodney A. (Kingston, TN), Walker; Frederick J. (Oak Ridge, TN), Chisholm; Matthew F. (Oak Ridge, TN)
UT-Battelle, LLC (Oak Ridge, TN)
09/ 286,798
April 6, 1999
This invention was made with Government support under Contract No. DE-AC05-960R22464 awarded by the U.S. Department of Energy to Lockheed Martin Energy Research Corporation, and the Government has certain rights in the invention.