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Reduction of B-integral accumulation in lasers

United States Patent

October 31, 2000
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A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus, the effects of self-phase modulation in the laser pulse are substantially reduced.
Meyerhofer; David D. (Spencerport, NY), Konoplev; Oleg A. (Rochester, NY)
The United States of America as represented by the United States (Washington, DC)
09/ 092,053
June 5, 1998
STATEMENT OF RIGHTS OF INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-FC03-92SF19460 between the United States Department of Energy and the University of Rochester.