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Silicon-integrated thin-film structure for electro-optic applications

United States Patent

6,103,008
August 15, 2000
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
McKee; Rodney A. (Kingston, TN), Walker; Frederick Joseph (Oak Ridge, TN)
UT-Battelle, LLC (Oak Ridge, TN)
09/ 126,129
July 30, 1998
This invention was made with Government support under Contract No. DE-AC05-96OR22464 awarded by the U.S. Department of Energy to Lockheed Martin Energy Research Coporation, and the Government has certain rights in the invention.