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Method of forming buried oxide layers in silicon

United States Patent

6,090,689
July 18, 2000
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.
Sadana; Devendra Kumar (Pleasantville, NY), Holland; Orin Wayne (Lenoir City, TN)
International Business Machines Corporation (Armonk, NY)
09/ 034,445
March 4, 1998
The government has rights in this invention pursuant to contract DE-AC05-84OR21400 between the Dept. of Energy and Lockheed Martin Energy Research Corporation.