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Method of making AlInSb by metal-organic chemical vapor deposition

United States Patent

6,071,109
June 6, 2000
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.
Biefeld; Robert M. (Albuquerque, NM), Allerman; Andrew A. (Albuquerque, NM), Baucom; Kevin C. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
09/ 256,819
February 24, 1999
This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the Department of Energy. The Government has certain rights in the invention.