Skip to Content
Find More Like This
Return to Search

Infrared light sources with semimetal electron injection

United States Patent

5,995,529
November 30, 1999
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
An infrared light source is disclosed that comprises a layered semiconductor active region having a semimetal region and at least one quantum-well layer. The semimetal region, formed at an interface between a GaAsSb or GalnSb layer and an InAsSb layer, provides electrons and holes to the quantum-well layer to generate infrared light at a predetermined wavelength in the range of 2-6 .mu.m. Embodiments of the invention can be formed as electrically-activated light-emitting diodes (LEDs) or lasers, and as optically-pumped lasers. Since the active region is unipolar, multiple active regions can be stacked to form a broadband or multiple-wavelength infrared light source.
Kurtz; Steven R. (Albuquerque, NM), Biefeld; Robert M. (Albuquerque, NM), Allerman; Andrew A. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
08/ 838,573
April 10, 1997
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.