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Chemical vapor deposition of W-Si-N and W-B-N

United States Patent

5,916,634
June 29, 1999
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.
Fleming; James G. (Albuquerque, NM), Roherty-Osmun; Elizabeth Lynn (Albuquerque, NM), Smith; Paul M. (Albuquerque, NM), Custer; Jonathan S. (Albuquerque, NM), Jones; Ronald V. (Albuquerque, NM), Nicolet; Marc-A. (Pasadena, CA), Madar; Roland (Eybens, FR), Bernard; Claude (Brie et Angonnes, FR)
Sandia Corporation (Albuquerque, NM)
08/ 724,341
October 1, 1996
GOVERNMENT RIGHTS The Government has rights to this invention pursuant to Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy.