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Film growth at low pressure mediated by liquid flux and induced by activated oxygen

United States Patent Application

20030054105
A1
View the Complete Application at the US Patent & Trademark Office
The present invention is useful in growing complex films with high quality (low lattice strain, large grain size, high degree of perfection) at high rates and large area, and high efficiency use of material. A solid-state film is grown from a liquid, where atoms are supplied continuously by vapor deposition onto the liquid surface. The desired film material grows from or is precipitated from the liquid flux, which is in thermodynamic equilibrium with the desired film. The desired film growth starts at a substrate interface. If this is a biaxial textured surface suitable in chemical reactivity and lattice constant, the growth will be epitaxial with the substrate. The atomic mixture that forms the deposited film is supplied by the arrival of the atoms from a vapor onto the surface of the liquid flux. An important additional factor in the case of an oxide such as the HTSC YBCO is that activated oxygen needs to be present, along with molecular oxygen. This is key to allowing the inventive process to occur at low oxygen pressure.
Hammond, Robert H. (Los Altos, CA), Peng, Luke S. J. (Mountain View, CA), Wang, Weizhi (San Jose, CA), Jo, William (Mountain View, CA), Ohnishi, Tsuyoshi (Ichikawa, JP), Beasley, Malcolm R. (Palo Alto, CA)
10/ 220,000
August 14, 2002
[0002] This invention was supported in part by the U.S. Department of Energy (DOE) under contract number 19XTA478C. SPO No. 20165. The U.S. government has certain rights in this invention.