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Nanocrystal structures

United States Patent Application

20090253224
A1
View the Complete Application at the US Patent & Trademark Office
A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
Eisler, Hans J. (Stoneham, MA), Sundar, Vikram C. (Stoneham, MA), Walsh, Michael E. (Everett, MA), Klimov, Victor I. (Los Alamos, NM), Bawendi, Moungi G. (Cambridge, MA), Smith, Henry I. (Sudbury, MA)
Massachusetts Institute of Technology (Cambridge MA)
12/ 275,800
November 21, 2008
FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] The U.S. Government may have certain rights in this invention pursuant to Grant No. DMR-98-08941 awarded by the National Science Foundation and Grant No. NSF-CHE-97-08265 awarded by the U.S. Department of Energy.