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UNIVERSAL NUCLEATION LAYER/DIFFUSION BARRIER FOR ION BEAM ASSISTED DEPOSITION

United States Patent Application

20090110915
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
A method for a new universal nucleation-layer/diffusion barrier, which is based on amorphous films of Si--O and Si--N for ion-beam-assisted deposition (IBAD) process. Unlike other nucleation layers that were used in the past, this process works on a variety of substrates (glass, Hastelloy tape, Cu), with varying surface roughness, and with a wide range of thickness. In addition, this new material system of Si--O (and Si--N) is ideally suited for oxide (and nitride) based multilayer stacks. As importantly, the flexibility in nucleation layer thickness allows the nucleation layer to be an effective diffusion barrier, and to be grown at room temperature, while the IBAD layer and subsequent epitaxial layers can be grown much thinner than usual.
FINDIKOGLU, Alp T. (Los Alamos, NM)
LOS ALAMOS NATIONAL SECURITY, LLC (Los Alamos NM)
11/ 923,232
October 24, 2007
STATEMENT REGARDING FEDERAL RIGHTS [0001] This invention was made with government support under Contract No. DE-AC52-06NA25396 awarded by the U.S. Department of Energy. The government has certain rights in the invention.