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GaInNAsSb solar cells grown by molecular beam epitaxy

United States Patent Application

20090014061
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.
Harris, JR., James S. (Stanford, CA), Yuen, Homan B. (Sunnyvale, CA), Bank, Seth R. (Austin, TX), Wistey, Mark A. (Santa Barbara, CA), Jackrel, David B. (Pacifica, CA)
The Board of Trustees of the Leland Stanford Junior University (Palo Alto CA)
12/ 217,818
July 8, 2008
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This material is based on work supported by the NSF under Grants No. 9900793 and No. 0140297, with imaging and measurements carried out by NREL under Contract No. DE-AC36-99GO10337 with the U.S. Department of Energy. The subject matter herein described is subject to a government license in connection with Leland Stanford Junior University.