A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
 This material is based on work supported by the NSF under Grants No. 9900793 and No. 0140297, with imaging and measurements carried out by NREL under Contract No. DE-AC36-99GO10337 with the U.S. Department of Energy. The subject matter herein described is subject to a government license in connection with Leland Stanford Junior University.