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ION BEAM TREATMENT FOR THE STRUCTURAL INTEGRITY OF AIR-GAP III-NITRIDE DEVICES PRODUCED BY THE PHOTOELECTROCHEMICAL (PEC) ETCHING

United States Patent Application

20080182420
A1
View the Complete Application at the US Patent & Trademark Office
A method for ensuring the structural integrity of III-nitride opto-electronic or opto-mechanical air-gap nano-structured devices, comprising (a) performing ion beam implantation in a region of the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device, wherein the milling significantly locally modifies a material property in the region to provide the structural integrity; and (b) performing a band-gap selective photo-electro-chemical (PEC) etch on the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device. The method can be used to fabricate distributed Bragg reflectors or photonic crystals, for example. The method also comprises the suitable design of distributed Bragg reflector (DBR) structures for the PEC etching and the ion-beam treatment, the suitable design of photonic crystal distributed Bragg reflector (PCDBR) structures for PEC etching and the ion-beam treatment, the suitable placement of protection layers to prevent the ion-beam damage to optical activity and PEC etch selectivity, and a suitable annealing treatment for curing the material quality after the ion-beam treatment.
Hu, Evelyn L. (Goleta, CA), Nakamura, Shuji (Santa Barbara, CA), Choi, Yong Seok (Goleta, CA), Sharma, Rajat (Goleta, CA), Wang, Chiou-Fu (Goleta, CA)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
11/ 940,876
November 15, 2007
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT [0007] This invention was made with Government support under Grant No. DE-FC26-01NT41203 awarded by the Department of Energy. The Government has certain rights in this invention.