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Use of tungsten interlayer to enhance the initial nucleation and conformality of ultrananocrystalline diamond (UNCD) thin films

United States Patent Application

20070257265
A1
View the Complete Application at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
Extremely smooth (6 nm roughness) and continuous ultrananocrystalline diamond (UNCD) thin films were achieved by microwave plasma chemical vapor deposition using a thin 10 nm tungsten (W) interlayer between the silicon (Si) substrate and the diamond film. The W interlayer significantly increased the initial UNCD nucleation density to >10.sup.12 sites/cm.sup.2, thereby lowering the surface roughness and eliminating interfacial voids. A method is also disclosed to make various articles.
Naguib, Nevin N. (Aurora, IL), Birrell, James (Chicago, IL), Elam, Jeffrey W. (Elmhurst, IL), Carlisle, John A. (Plainfield, IL), Auciello, Orlando H. (Bolingbrook, IL)
The University of Chicago (Chicago IL)
11/ 429,016
May 3, 2006
CONTRACTUAL ORIGIN OF THE INVENTION [0001] The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy and The University of Chicago representing Argonne National Laboratory.