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Atmospheric pressure plasma etching reactor

United States Patent Application

20020124962
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
An atmospheric pressure plasma etching reactor has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture. With a radio-frequency voltage connected between the table and the at least one electrode, a plasma is created between the at least one electrode and the wafer to be processed processing the wafer to be processed as it is moved under the at least one electrode by the table.
Selwyn, Gary S. (Los Alamos, NM), Henins, Ivars (Los Alamos, NM), Snyder, Hans (Los Alamos, NM)
09/ 804,593
March 12, 2001
[0001] This invention was made with Government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.