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Development of an electronic device quality aluminum antimonide (AISb) semiconductor for solar cell applications

United States Patent Application

20070137700
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
For the first time, electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.
Sherohman, John W. (Livermore, CA), Yee, Jick Hong (Livermore, CA), Coombs, Arthur W. III (Patterson, CA)
The Regents of the University of California
11/ 305,381
December 16, 2005
[0001] The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.