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METAL-ASSISTED ETCH COMBINED WITH REGULARIZING ETCH

United States Patent Application

20180108791
A1
View the Complete Application at the US Patent & Trademark Office
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.
Yim, Joanne (San Francisco, CA), Miller, Jeffrey B. (Brookline, MA), Jura, Michael (Santa Monica, CA), Black, Marcie R. (Lincoln, MA), Forziati, Joanne (Everett, MA), Murphy, Brian P. (Revere, MA), Magliozzi, Lauren (Denver, CO)
15/ 837,322
December 11, 2017
FEDERALLY SPONSORED RESEARCH [0002] This invention was made with government support under Contract No. DE-EE0005323 (BA) awarded by the U.S. Department of Energy. The government has certain rights in the invention.