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Doped Gate Dielectric Materials

United States Patent Application

20180097081
A1
View the Complete Application at the US Patent & Trademark Office
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
CAO, Yu (Agoura Hills, CA), CHU, Rongming (Agoura Hills, CA), Li, Zijian Ray (Thousand Oaks, CA)
HRL Laboratories, LLC (Malibu CA)
15/ 663,584
July 28, 2017
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with Government support under Contract No. DE-AR000450 awarded by the Department of Energy. The Government has certain rights in the invention.