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FLEXIBLE SILICON INFRARED EMITTER

United States Patent Application

20180033905
A1
View the Complete Application at the US Patent & Trademark Office
An apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure structure formed on the silicon substrate. The heterojunction structure includes a first layered structured deposited on a first side of the silicon substrate. The first layered structured includes a first amorphous intrinsic silicon layer, an amorphous n-type or p-type silicon layer, and a transparent conductive layer. The second layered structure includes a second amorphous intrinsic silicon layer, an amorphous p-type or n-type silicon layer, and a transparent conductive layer. The heterostructure structure is configured to operate as a photovoltaic cell and an infrared light emitting diode.
Augusto, Andre Filipe Rodrigues (Tempe, AZ), Herasimenka, Stanislau (Tempe, AZ), Bowden, Stuart (Tempe, AZ)
15/ 665,240
July 31, 2017
STATEMENT OF GOVERNMENT SUPPORTED RESEARCH [0002] This invention was made with government support under NSF CA No. EEC-1041895 awarded by the National Science Foundation and Department of Energy and DODRIF13-OEPP01-P-0020 awarded by the U.S. Department of Defense. The U.S. government may have certain rights in the invention.