Skip to Content
Find More Like This
Return to Search

RADIATION DETECTOR

United States Patent Application

20180024254
A1
View the Complete Application at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.
ROY, UTPAL N. (RIDGE, NY), JAMES, RALPH B. (RIDGE, NY), BOLOTNIKOV, ALEKSEY (SOUTH SETAUKET, NY), CAMARDA, GIUSEPPE (FARMINGVILLE, NY), CUI, YONGGANG (MILLER PLACE, NY), HOSSAIN, ANWAR (PORT JEFFERSON STATION, NY), YANG, GE (MORICHES, NY), PRADHAN, ASWINI (NORFOLK, VA), MUNDLE, RAJ EH (NORFOLK, VA)
BROOKHAVEN SCIENCE ASSOCIATES, LLC (UPTON NY), NORFOLK STATE UNIVERSITY (NORFOLK VA)
15/ 549,935
February 12, 2016
STATEMENT OF GOVERNMENT RIGHTS [0002] The present invention was made with government support under contract numbers DE-ACO2-98CH10886 and DE-SC0012704 awarded by the U.S. Department of Energy. The United States government may have certain rights in this invention.