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BULK DIRECT GAP MOS2 BY PLASMA INDUCED LAYER DECOUPLING

United States Patent Application

20180026422
A1
View the Complete Application at the US Patent & Trademark Office
Bulk direct transition metal dichalcogenide (TMDC) may have an increased interlayer separation of at least 0.5, 1, or 3 angstroms more than its bulk value. The TMDC may be a bulk direct band gap molybdenum disulfide (MoS2) or a bulk direct band gap tungsten diselenide (WSe.sub.2). Oxygen may be between the interlayers. A device may include the TMDC, such as an optoelectronic device, such as an LED, solid state laser, a photodetector, a solar cell, a FET, a thermoelectric generator, or a thermoelectric cooler. A method of making bulk direct transition metal dichalcogenide (TMDC) with increased interlayer separation may include exposing bulk direct TMDC to a remote (aka downstream) oxygen plasma. The plasma exposure may cause an increase in the photoluminescence efficiency of the TMDC, more charge neutral doping, or longer photo-excited carrier lifetimes, as compared to the TMDC without the plasma exposure.
Cronin, Stephen B. (South Pasadena, CA), Dhall, Rohan (Los Angeles, CA), Lake, Roger (Riverside, CA), Li, Zhen (Los Angeles, CA), Neupane, Mahesh (Riverside, CA), Wickramaratne, Darshana (Riverside, CA)
UNIVERSITY OF SOUTHERN CALIFORNIA (Los Angeles CA), THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
15/ 536,628
December 16, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0002] This invention was made with government support under Contract No. DE-FG02-07ER46376 awarded by the Department of Energy; this invention was also made with government support under Contract Nos. 1124733 and 1128304 awarded by the National Science Foundation. The government has certain rights in the invention.