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METHODS OF FORMING SILICON CARBIDE BY SPARK PLASMA SINTERING, METHODS OF FORMING ARTICLES INCLUDING SILICON CARBIDE BY SPARK PLASMA SINTERING, AND RELATED STRUCTURES

United States Patent Application

20170369381
A1
View the Complete Application at the US Patent & Trademark Office
Idaho National Laboratory - Visit the Technology Transfer and Commercialization Office Website
A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50.degree. C./min and about 200.degree. C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
CHU, HENRY S. (IDAHO FALLS, ID), O'BRIEN, ROBERT C. (IDAHO FALLS, ID), COOK, STEVEN K. (IDAHO FALLS, ID), BAKAS, MICHAEL P. (RALEIGH, NC)
15/ 195,313
June 28, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] This invention was made with government support under Contract Number DE-AC07-05-ID14517 awarded by the United States Department of Energy. The government has certain rights in the invention.