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PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AND RELATED SURFACE ORIENTATION

United States Patent Application

20170330746
A1
View the Complete Application at the US Patent & Trademark Office
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.
KOECK, FRANZ A. (TEMPE, AZ), CHOWDHURY, SRABANTI (CHANDLER, AZ), NEMANICH, ROBERT J. (SCOTTSDALE, AZ)
15/ 151,295
May 10, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0001] This disclosure was made with government support under DE-AR0000453 awarded by the Advanced Research Projects Agency-Energy (ARAPA-E). The government has certain rights in the disclosure.