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Monolithically Integrated Infrared Transceiver

United States Patent Application

20170302054
A1
View the Complete Application at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.
Wanke, Michael (Albuquerque, NM), Nordquist, Christopher (Albuquerque, NM), Lee, Mark (Plano, TX)
14/ 575,430
December 18, 2014
STATEMENT OF GOVERNMENT INTEREST [0002] This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U. S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.