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STRUCTURES FOR NITRIDE VERTICAL TRANSISTORS

United States Patent Application

20170236951
A1
View the Complete Application at the US Patent & Trademark Office
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.
Sun, Min (Cambridge, MA), Palacios, Tomas Apostol (Belmont, MA)
Massachusetts Institute of Technology (Cambridge MA)
15/ 388,963
December 22, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with Government support under Grant No. DE-AR0000452 awarded by the Department of Energy. The Government has certain rights in the invention.