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RADIATION TOLERANT MICROSTRUCTURED THREE DIMENSIONAL SEMICONDUCTOR STRUCTURE

United States Patent Application

20170221595
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.
Frye, Clint (Livermore, CA), Henderson, Roger A. (Brentwood, CA), Murphy, John Winter (Mountain House, CA), Nikolic, Rebecca J. (Oakland, CA), Qu, Dongxia (Livermore, CA), Shao, Qinghui (Fremont, CA), Stoyer, Mark A. (Livermore, CA), Voss, Lars (Livermore, CA)
15/ 494,219
April 21, 2017
[0001] The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.