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Formation of Ohmic Back Contact for Ag2ZnSn(S,Se)4 Photovoltaic Devices

United States Patent Application

20170194518
A1
View the Complete Application at the US Patent & Trademark Office
Techniques for forming an ohmic back contact for Ag.sub.2ZnSn(S,Se).sub.4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO.sub.2, ZnO, SnO, ZnSnO, Ga.sub.2O.sub.3, and combinations thereof. A photovoltaic device is also provided.
Gershon, Talia S. (White Plains, NY), Gunawan, Oki (Westwood, NJ), Haight, Richard A. (Mahopac, NY), Mankad, Ravin (Yonkers, NY)
14/ 984,512
December 30, 2015
STATEMENT OF GOVERNMENT RIGHTS [0001] This invention was made with Government support under Contract number DE-EE0006334 awarded by The Department of Energy. The Government has certain rights in this invention.