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SYSTEM AND METHODS FOR FABRICATING BORON NITRIDE NANOSTRUCTURES

United States Patent Application

20170197832
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.
Fathalizadeh, Aidin (Berkeley, CA), Pham, Thang (Berkeley, CA), Mickelson, William (Albany, CA), Zettl, Alexander (Kensington, CA)
15/ 321,177
June 24, 2015
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy and Grant No. EEC-0832819 awarded by the National Science Foundation. The government has certain rights in this invention.