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THREE DIMENSIONAL VERTICALLY STRUCTURED MISFET/MESFET

United States Patent Application

20170200833
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.
Conway, Adam (Livermore, CA), Harrison, Sara Elizabeth (Fremont, CA), Nikolic, Rebecca J. (Oakland, CA), Shao, Qinghui (Fremont, CA), Voss, Lars (Livermore, CA), Chowdhury, Srabanti (Santa Clara, CA)
14/ 990,561
January 7, 2016
[0001] The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.