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TUNNEL BARRIER SCHOTTKY

United States Patent Application

20170047453
A1
View the Complete Application at the US Patent & Trademark Office
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
Chu, Rongming (Agoura Hills, CA), Cao, Yu (Agoura Hills, CA), Li, Zijian "Ray" (Thousand Oaks, CA), Williams, Adam J. (Malibu, CA)
15/ 093,710
April 7, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] The present invention was made with government support under Contract No. DE-AR0000450 awarded by the Department of Energy. The government has certain rights to the present invention.