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Semiconductor Composition Containing Iron, Dysprosium, and Terbium

United States Patent Application

*** PATENT GRANTED ***
20170005170
9,773,876
A1
View the Complete Application at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
Pooser, Raphael C. (Knoxville, TN), Lawrie, Benjamin J. (Oak Ridge, TN), Baddorf, Arthur P. (Knoxville, TN), Malasi, Abhinav (Knoxville, TN), Taz, Humaira (Knoxville, TN), Farah, Annettee E. (Knoxville, TN), Kalyanaraman, Ramakrishnan (Knoxville, TN), Duscher, Gerd Josef Mansfred (Knoxville, TN), Patel, Maulik K. (Knoxville, TN)
15/ 194,715
June 28, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH [0002] The United States Government has rights in this invention pursuant to contract no. DE-AC05-000R22725 between the United States Department of Energy and UT-Battelle, LLC.