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RADIO FREQUENCY PLASMA METHOD FOR UNIFORM SURFACE PROCESSING OF RF CAVITIES AND OTHER THREE-DIMENSIONAL STRUCTURES

United States Patent Application

20170040144
A1
View the Complete Application at the US Patent & Trademark Office
A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.
Popovic, Svetozar (Norfolk, VA), UPADHYAY, JANARDAN (Norfolk, VA), VUSKOVIC, LEPOSAVA (Norfolk, VA), Phillips, H. Lawrence (Hayes, VA), VALENTE-FELICIANO, ANNE-MARIE (Newport News, VA)
Old Dominion University (Norfolk VA)
14/ 688,363
April 16, 2015
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] The present invention was made in the course of federally sponsored research or development pursuant to U.S. Department of Energy Project RF #325111. The United States Government may have certain Walk-In-Rights in the invention.