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ULTRANANOCRYSTALLINE DIAMOND CONTACTS FOR ELECTRONIC DEVICES

United States Patent Application

20170047468
A1
View the Complete Application at the US Patent & Trademark Office
Brookhaven National Laboratory - Visit the Office of Technology Commercialization and Partnerships Website
A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.
Sumant, Anirudha V. (Plainfield, IL), Smedley, John (Shirley, NY), Muller, Erik (South Setauket, NY)
Brookhaven Science Associates, LLC (Upton NY), UChicago Argonne, LLC (Chicago IL), The Research Foundation for the State University of New York (Albany NY)
15/ 339,295
October 31, 2016
[0002] The United States Government claims certain rights in this invention pursuant to Contract Nos. DE-AC02-98CH10886 and DE-SC0012704 awarded by the U.S. Department of Energy to Brookhaven Science Associates, LLC, Contract No. W-31-109-ENG-38 between the United States Government and the University of Chicago and/or pursuant to DE-AC02-06CH11357 between the United States Government and UChicago Argonne, LLC representing Argonne National Laboratory.