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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
Microwave AC conductivity may be improved or tuned in a material, for example, a dielectric or semiconductor material, by manipulating domain wall morphology in the material. Domain walls may be created, erased or reconfigured to control the AC conductivity, for example, for crafting circuit elements. The density and placement of domain walls may increase or decrease the AC conductivity and may control AC conduction pathways through the material. An electric potential applied to the material's surface may create a desired pattern of domain walls to meet desired AC conductivity criteria. Incline angle of the domain walls may be modified relative to a crystallographic axis of the material to temporarily or permanently modify or gate AC conductivity of the material. For example, the AC conductivity of the material may be gated by domain wall incline angle to increase, decrease or throttle current flowing through the material for an electronic circuit element.
Maksymovych, Petro (Oak Ridge, TN), Tselev, Alexander (Oak Ridge, TN), Kalinin, Sergei V. (Oak Ridge, TN)
15/ 285,332
October 4, 2016
STATEMENT REGARDING FEDERALLY FUNDED RESEARCH AND DEVELOPMENT [0002] The United States Government has rights in this invention pursuant to contract no. DE-ACO5-000R22725 between the United States Department of Energy and UT-Battelle, LLC.