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PASSIVATED CONTACT FORMATION USING ION IMPLANTATION

United States Patent Application

20170141254
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Methods for forming passivated contacts include implanting compound-forming ions into a substrate to about a first depth below a surface of the substrate, and implanting dopant ions into the substrate to about a second depth below the surface. The second depth may be shallower than the first depth. The methods also include annealing the substrate.
YOUNG, David L. (Golden, CO), STRADINS, Pauls (Golden, CO), NEMETH, William (Littleton, CO)
15/ 349,630
November 11, 2016
CONTRACTUAL ORIGIN [0002] The United States Government has rights in this invention under Contract No. DE-AC36-08G028308 between the United States Department of Energy and Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.