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SELECTIVE AREA GROWTH OF SEMICONDUCTORS USING PATTERNED SOL-GEL MATERIALS

United States Patent Application

20170154771
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
WARREN, Emily L. (Golden, CO), TAMBOLI, Adele Clare (Golden, CO)
15/ 362,420
November 28, 2016
CONTRACTUAL ORIGIN [0002] The Unite States Government has rights in this invention under Contract No. DEAC36-08GO283078 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.