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Spin Current Devices and Methods of Fabrication Thereof

United States Patent Application

20170104150
A1
View the Complete Application at the US Patent & Trademark Office
Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between "on" and "off" states by controlling an in-plane magnetization orientation of the magnetic insulator. In the "on" state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the "off" state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.
Shi, Jing (Riverside, CA), Li, Junxue (Riverside, CA), Xu, Yadong (Riverside, CA), Aldosary, Mohammed (Riverside, CA), Tang, Chi (Riverside, CA), Lake, Roger (Riverside, CA)
15/ 289,850
October 10, 2016
GOVERNMENT SUPPORT [0002] The invention was supported, in whole or in part, under Award #SC0012670 from the U.S. Department of Energy. The Government has certain rights in the invention.