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Achieving Band Gap Grading of CZTS and CZTSe Materials

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.
Gershon, Talia S. (White Plains, NY), Haight, Richard A. (Mahopac, NY), Hopstaken, Marinus (Carmel, NY), Lee, Yun Seog (White Plains, NY)
14/ 883,300
October 14, 2015
STATEMENT OF GOVERNMENT RIGHTS [0001] This invention was made with Government support under Contract number DE-EE0006334 awarded by The Department of Energy. The Government has certain rights in this invention.