A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves deposition of a doped semiconductor layer on a substrate and epitaxial growth of a thin, monocrystalline, semiconductor layer on the doped layer. After bonding the thin epitaxial monocrystalline semiconductor layer to a second substrate, hydrogen is introduced into the doped layer, and the thin layer is cleaved and transferred to the second substrate, with the cleaving controlled to happen at the doped layer.
STATEMENT REGARDING FEDERAL RIGHTS
 This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.