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Method of transferring a thin crystalline semiconductor layer

United States Patent Application

20060270190
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves deposition of a doped semiconductor layer on a substrate and epitaxial growth of a thin, monocrystalline, semiconductor layer on the doped layer. After bonding the thin epitaxial monocrystalline semiconductor layer to a second substrate, hydrogen is introduced into the doped layer, and the thin layer is cleaved and transferred to the second substrate, with the cleaving controlled to happen at the doped layer.
Nastasi, Michael A. (Santa Fe, NM), Shao, Lin (Los Alamos, NM), Thompson, Phillip E. (Springfield, VA), Lau, Silvanus S. (San Diego, CA), Theodore, N. David (Mesa, AZ), Alford, Terry L. (Phoenix, AZ), Mayer, James W. (Phoenix, AZ)
The Regents of the University of California
11/ 137,979
May 25, 2005
STATEMENT REGARDING FEDERAL RIGHTS [0001] This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.