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METAL CHALCOGENIDES FOR PSEUDOCAPACITIVE APPLICATIONS

United States Patent Application

20170162875
A1
View the Complete Application at the US Patent & Trademark Office
A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.
Tolbert, Sarah H. (Los Angeles, CA), Dunn, Bruce S. (Los Angeles, CA), Cook, John (Van Nuys, CA), Kim, Hyungseok (Los Angeles, CA), Lin, Terri Chai (Fremont, CA)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
15/ 359,996
November 23, 2016
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] This invention was made with Government support under DE-SC0001342 and under DE-SC0014213, awarded by the United States Department of Energy, and under DGE-0903720, awarded by the National Science Foundation. The Government has certain rights in the invention.