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GROWTH OF SINGLE CRYSTAL III-V SEMICONDUCTORS ON AMORPHOUS SUBSTRATES

United States Patent Application

20170175290
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.
Chen, Kevin (Berkeley, CA), Kapadia, Rehan (Los Angeles, CA), Javey, Ali (Lafayette, CA)
The Regents of the University of California (Oakland CA)
15/ 354,063
November 17, 2016
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in this invention.