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Photovoltaic Device Based on Ag2ZnSn(S,Se)4 Absorber

United States Patent Application

20170133539
A1
View the Complete Application at the US Patent & Trademark Office
Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.
Gershon, Talia S. (White Plains, NY), Guha, Supratik (Chicago, IL), Gunawan, Oki (Westwood, NJ), Haight, Richard A. (Mahopac, NY), Lee, Yun Seog (White Plains, NY)
14/ 936,131
November 9, 2015
STATEMENT OF GOVERNMENT RIGHTS [0001] This invention was made with Government support under Contract number DE-EE0006334 awarded by The Department of Energy. The Government has certain rights in this invention.