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PROTON RESISTIVE MEMORY DEVICES AND METHODS

United States Patent Application

20170047513
A1
View the Complete Application at the US Patent & Trademark Office
Disclosed herein is a memory device operating based on proton conduction between a source electrode and a drain electrode through a proton-conducting layer. As the memory device operates, protons from the source migrate through the proton-conducting layer and into the drain electrode. The memory device exhibits memory, in the form of changing net conductivity, based on the amount of protons conducted from source to drain. The memory device can be reset by regenerating the source electrode (e.g., through electrical or chemical action). The memory device can be incorporated into an integrated circuit as a memory element. Related methods of using the memory device are also disclosed.
Rolandi, Marco (Seattle, WA), Josberger, Erik (Seattle, WA), Deng, Yingxin (Seattle, WA)
University of Washington (Seattle WA)
15/ 306,041
April 21, 2015
STATEMENT OF GOVERNMENT LICENSE RIGHTS [0002] This invention was made with Government support under DE-SC0010441 awarded by the U.S. Department of Energy; and under DMR 1150630, awarded by the National Science Foundation. The Government has certain rights in the invention.