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SOLUTION GROWTH OF SINGLE-CRYSTAL PEROVSKITE STRUCTURES

United States Patent Application

20170152608
A1
View the Complete Application at the US Patent & Trademark Office
A method for growing single-crystal perovskite structures comprises immersing a film of a metal precursor compound on a surface of a substrate, the metal precursor compound comprising a metal ion B, in a solution comprising a cation precursor compound, the cation precursor compound comprising a cation ion A and an anion X, at a concentration of the cation precursor compound, a growth time, and a growth temperature sufficient to dissolve the film to release the metal ion B to form a complex with the anion X and sufficient to induce recrystallization of the complex with the cation ion A to form a plurality of single-crystal perovskite structures composed of A, B and X. The single-crystal perovskite structures, devices incorporating the same, and methods of using the devices are also provided.
Jin, Song (Madison, WI), Fu, Yongping (Madison, WI), Meng, Fei (Madison, WI)
14/ 954,442
November 30, 2015
REFERENCE TO GOVERNMENT RIGHTS [0001] This invention was made with government support under DE-SC0002162 awarded by the US Department of Energy. The government has certain rights in the invention.