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ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES

United States Patent Application

20170084771
A1
View the Complete Application at the US Patent & Trademark Office
A tunnel junction for a semiconductor device is disclosed. The tunnel junction includes a n-doped tunnel layer and a p-doped tunnel layer. The p-doped tunnel layer is constructed of aluminum gallium arsenide antimonide (AlGaAsSb). A semiconductor device including the tunnel junction with the p-doped tunnel layer constructed of AlGaAsSb is also disclosed.
Chiu, Philip T. (La Crescenta, CA), Haddad, Moran (Granada Hills, CA), King, Richard R. (Thousand Oaks, CA)
14/ 860,214
September 21, 2015
[0001] This disclosure was made with U.S. Government support under Contract No. ZFM-2-22051-01 awarded by the Department of Energy. The U.S. Government has certain rights in this disclosure.